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  mpxm2010 series 1 sensor device data freescale semiconductor 10 kpa on- chip temperature compensated & calibrated silicon pressure sensors the mpxm2010 device is a silicon pi ezoresistive pressure sensors providing a highly accurate and linear voltage output ? directly proportional to the applied pressure. the sensor is a single, monolithic silicon diaphragm with the strain gauge and a thin--film resistor network integrated on--chip. the chip is laser trimmed for precise span and offset calibration and temperature compensation. features ? temperature compensated over 0 cto+85 c ? available in easy--to--use tape & reel ? ratiometric to supply voltage ? gauge ported & non ported options application examples ? respiratory diagnostics ? air movement control ? controllers ? pressure switching figure 1 shows a block diagram of the internal circuitry on the stand--alone pressure sensor chip. figure 1. temperature compensated pressure sensor schematic v s 3 sensing element thin film temperature compensation and calibration circuitry 2 4 v out+ v out-- 1 gnd voltage output versus applied differential pressure the differential voltage output of the sensor is directly proportional to the differential pressure applied. the output voltage of the differential or gauge sensor increases with increasing pressure applied to the pressure side (p1) relative to the vacuum side (p2). similarly, output voltage increases as increasing vacuum is applied to the vacuum side (p2) relative to the pressure side (p1). preferred devices are freescale semiconductor recommended choices for future use and best overall value. mpxm2010 rev. 2, 10/2004 freescale semiconductor technical data ? freescale semiconductor, inc., 2004. all rights reserved. mpxm2010 series 0 to 10 kpa (0 to 1.45 psi) 25 mv full scale span (typical) pin number 1 2 gnd +v out 3 4 v s -- v out freescale semiconductor preferred device MPXM2010D/dt1 case 1320 mpxm2010gs/gst1 case 1320a scale 1:1 scale 1:1 mpak package
2 sensor device data freescale semiconductor mpxm2010 series maximum ratings (note) rating symbol value unit maximum pressure (p1 > p2) p max 75 kpa storage temperature t stg --40 to +125 c operating temperature t a --40 to +125 c note: exposure beyond the specified limits may cause permanent damage or degradation to the device. operating characteristics (v s =10vdc,t a =25 c unless otherwise noted, p1 > p2) characteristic symbol min typ max unit pressure range (1) p op 0 ? 10 kpa supply voltage (2) v s ? 10 16 vdc supply current i o ? 6.0 ? madc full scale span (3) v fss 24 25 26 mv offset (4) v off -- 1 . 0 ? 1.0 mv sensitivity ? v/ ? p ? 2.5 ? mv/kpa linearity (5) ? -- 1 . 0 ? 1.0 %v fss pressure hysteresis (5) (0 to 10 kpa) ? ? 0.1 ? %v fss temperature hysteresis (5) (--40 c to +125 c) ? ? 0.5 ? %v fss temperature effect on full scale span (5) tcv fss -- 1 . 0 ? 1.0 %v fss temperature effect on offset (5) tcv off -- 1 . 0 ? 1.0 mv input impedance z in 1000 ? 2550 ? output impedance z out 1400 ? 3000 ? response time (6) (10% to 90%) t r ? 1.0 ? ms warm--up ? ? 20 ? ms offset stability (7) ? ? 0.5 ? %v fss notes: 1. 1.0 kpa (kilopascal) equals 0.145 psi. 2. device is ratiometric within this specified excitation range. operating the device above the specified excitation range may induce additional error due to device self--heating. 3. full scale span (v fss ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. 4. offset (v off ) is defined as the output voltage at the minimum rated pressure. 5. accuracy (error budget) consists of the following: ? linearity: output deviation from a straight line relationship with pressure, using end point method, over the specified pressure range. ? temperature hysteresis: output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. ? pressure hysteresis: output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum or maximum rated pressure, at 25 c. ? tcspan: output deviation at full rated pressure over the temperature range of 0 to 85 c, relative to 25 c. ? tcoffset: output deviation with minimum rated pressure applied, over the temperature range of 0 to 85 c, relative to 25 c. 6. response time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. 7. offset stability is the product?s output deviation when subjected to 1000 hours of pulsed pressure, temperature cycling with bias test.
mpxm2010 series 3 sensor device data freescale semiconductor linearity linearity refers to how well a transducer?s output follows the equation: v out =v off + sensitivity x p over the operating pressure range. there are two basic methods for calculating nonlinearity: (1) end point straight line fit (see figure 2) or (2) a least squares best line fit. while a least squares fit gives the ?best case? linearity error (lower numerical value), the calculations required are burdensome. conversely, an end point fit will give the ?worst case? error (often more desirable in error budget calculations) and the cal- culations are more straightforward for the user. freescale semiconductor?s specified pressure sensor linearities are based on the end point straight line method measured at the midrange pressure. figure 2. linearity specification comparison least square deviation relative voltage output pressure (% fullscale) 0 50 100 end point straight line fit exaggerated performance curve least squares fit straight line deviation offset on--chip temperature compensation and calibration figure 3 shows the minimum, maximum and typical output characteristics of the mpxm2010 series at 25 c. the output is directly proportional to the differential pressure and is es- sentially a straight line. a silicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. figure 3. output versus pressure differential min typ offset (typ) 30 20 15 10 5 output (mvdc) 25 0 -- 5 kpa psi 2.5 0.362 5 0.725 7.5 1.09 10 1.45 a max span range (typ) v s =10vdc t a =25 c p1 > p2 ordering information d e v i c e t y p e o p t i o n s c a s e n o de v ice type options c ase n o. MPXM2010D non--ported 1320 MPXM2010Dt1 non--ported, tape and reel 1320 mpxm2010gs ported 1320a mpxm2010gst1 ported, tape and reel 1320a
4 sensor device data freescale semiconductor mpxm2010 series package dimensions case 1320--02 issue a dim min max inches a .155 .165 a1 .002 .010 b .014 .018 b1 .120 .130 d .245 .255 e .475 .485 e e/2 l .038 .048 e1 .325 .335 07 .025 bsc .050 bsc notes: 1. dimensions are in inches. 2. interpret dimensions and tolerances per asme y14.5m--1994. 3. dimensions ?d? and ?e1? do not include mold flash or protrusion. mold flash or protrusion shall not exceed .006? per side. 4. all vertical surfaces to be 5 maximum. 5. dimensions ?b? does not include dambar protrusion. allowable dambar protrusion shall be .008 maximum. b1 e e/2 e a m 0.004 b c a 0.006 b c 4x b 2x a m 0.004 b c e1 a c 0.004 detail e seating plane gage plane detail e l a1 .014 b d a pin 1 pin 4 style 1: pin 1. gnd 2. +vout 3. vs 4. --vout
mpxm2010 series 5 sensor device data freescale semiconductor case 1320a--02 issue o dim min max inches a .377 .397 a1 .002 .010 b .014 .018 b1 .120 .130 d .245 .255 e .475 .485 e e/2 l .013 .023 e1 .325 .335 07 .025 bsc .050 bsc notes: 1. dimensions are in inches. 2. interpret dimensions and tolerances per asme y14.5m--1994. 3. dimensions ?d? and ?e1? do not include mold flash or protrusion. mold flash or protrusion shall not exceed .006? per side. 4. all vertical surfaces to be 5 maximum. 5. dimensions ?b? does not include dambar protrusion. allowable dambar protrusion shall be .008 maximum. b1 e e/2 e a m 0.004 b c a 0.006 b c 4x b 2x a m 0.004 b c e1 a c 0.004 detail e seating plane gage plane detail e l a1 .014 b d a m .283 .293 n .363 .373 p .107 .117 s .192 .202 n s p
6 sensor device data freescale semiconductor mpxm2010 series notes
mpxm2010 series 7 sensor device data freescale semiconductor notes
8 sensor device data freescale semiconductor mpxm2010 series information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale semiconductor assume any liability arising out of t he application or use of any product or circuit, and specifically disclaims any and all liabilit y, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsid iaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004. all rights reserved. how to reach us: home page: www.freescale.com e--mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1--800--521--6274 or +1--480--768--2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) support@freescale.com japan: freescale semiconductor japan ltd. technical information center 3--20--1, minami--azabu, minato--ku tokyo 106--0047, japan 0120 191014 or +81 3 3440 3569 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1--800--441--2447 or 303--675--2140 fax: 303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com mpxm2010 rev. 2 10/2004


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